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Electrochemical memory for robust analog computing systems
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- Discover the post-CMOS future of computing that overcomes the physical and energetic limits of traditional binary electronics.
- See how we're eliminating the reliability gaps in analog design that have blocked commercialization, turning complex physics into predictable performance.
- Learn about our revolutionary 3-terminal memory that encodes information in a 3D volume, delivering unprecedented density and stable analog states.
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Abstract:
Over the past several decades, electronics have relied on deterministic, binary states accessed by electrons to store and process information. The challenge of physical scaling of this approach motivates the need for post-CMOS or post-digital analog approaches to increase functional density and energy efficiency. Instead of using only electron motion to encode information, analog electronics can use electrical, thermal and electrochemical gradients in various heterogeneously integrated materials to move electrons, ions, and domains. Understanding the scientific basis of these complex, frequently coupled mechanisms is difficult, resulting in few reliable physics-based models that can be used by circuit and chip designers. These mechanisms also present increased sensitivity to variability, noise, and poorly controlled kinetic processes. As such, despite decades of research and promising laboratory-scale performance, knowledge gaps in the features of analog electronics have led to their consistent failures to meet the stringent requirements needed for their commercialization. In my presentation, I will discuss our recent work to address these challenges using 3-terminal electrochemical random access memory (ECRAM)1 that encodes information in three dimensional volumes, rather than 2-dimensions channels or 1-dimensional filaments and combines thermodynamic and kinetic mechanisms to stabilize a high density of analog states.
(1) Talin, A. A.; Meyer, J.; Li, J.; Huang, M.; Schwacke, M.; Chung, H. W.; Xu, L.; Fuller, E. J.; Li, Y.; Yildiz, B. Electrochemical Random-Access Memory: Progress, Perspectives, and Opportunities. Chem. Rev. 2025, 125 (4), 1962-2008. DOI: 10.1021/acs.chemrev.4c00512.
Where
MCMR 205 & Zoom
1435 W University Dr, , Boise, ID 83706, United States
Speakers
Alec Talin
Sandia National Laboratories
https://scholar.google.com/citations?user=1l-fEDkAAAAJ&hl=en
Alec Talin received Ph.D. in Materials Science and Engineering from UCLA in 1995. He is a Senior Scientist at Sandia National Laboratories, an Adjunct Associate Professor of Materials Science at the University of Maryland, College Park, and is a Fellow of the American Physical Society. Prior to joining Sandia, Alec spent 6 years at Motorola Labs in Phoenix, AZ and 3 years at the National Institute of Standards and Technology in Gaithersburg, MD. His interests focus on nanoelectronics and nanoionics, with applications to energy efficient computing, energy conversion, energy storage and national security.
Hosted By
Co-hosted with: College of Engineering
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